2N7002LT1

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 7500 mOhms


Pinout






Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	VDSS	60	Vdc
DrainGate Voltage (RGS = 1.0 MΩ)	VDGR	60	Vdc
Drain Current Continuous TC= 25°C (Note 1.) TC= 100°C(Note 1.) Pulsed (Note 2.)	ID ID IDM	±115 ±75 ±800	mAdc
GateSource Voltage Continuous Nonrepetitive (tp 50µs)	VGS VGSM	±20 ±40	Vdc Vpk

Description

The 2N7002LT1 is one member of the 2N7002L series.SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Features of the 2N7002LT1 are:(1)Pb-free packages are available.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

The absolute maximum ratings of the 2N7002LT1 can be summarized as:(1)drain-source voltage:60 V;(2)drain-gate voltage:60 V;(3)storage temperature:-55 to 150;(4)gate-source voltage:±20V;(5)drain current:±115mA;(6)junction temperature:150;(7)total power dissipation:300mW.Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to 2N7002LT1 are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

Parameters:

Technical/Catalog Information	2N7002LT1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	115mA
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	225mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N7002LT1 2N7002LT1 2N7002LT1OSTR ND 2N7002LT1OSTRND 2N7002LT1OSTR