2N7002W-7-F

The 2N7002W-7-F is a type of N-channel enhancement mode fifled effect transistor.

Features of the 2N7002W-7-F are:(1)low on-resistance;(2)low gate threshold voltage;(3)low input capacitance;(4)fa st switching speed;(5)low input/output leakage;(6)ultra-small surface mount package;(7)lead free/RoHS compliant (No purposefully added lead).

The absolute maximum ratings and electrical characteristics(TA = 25)of the 2N7002W-7-F can be summarized as:(1):drain-source voltage is 60 V;(2):drain-gate voltage is 60 V when Rgs is 1.0M or less than 1.0M;(3):gate-sour ce voltage(continuous) is ±20V;(4):drain current(Continuous) is 115mA; (5):total power dissipation is 200mW when  Derating above TA is 25°C ;(6):thermal resistance, junction to ambient is 625 K/W;(7):operating and storage temp erature Ranges from -55°C to +150°C.Electrical characteristics:(1)drain-source breakdown voltage is 60V min and 70V max when VGS is 0V and ID is 10uA;(2):gate-body leakage is±10 nA max when VGS is±20V and VDS is 0V;(3): gate threshold voltage is 1.0V min and 2.0 V max when VDS is VGS and ID is 250uA;(4):input capacitance is 22pF typ and 50 pF max when VDS is 25V, VGS is 0V and f is 1.0MHz;(5):turn-on delay time tD(ON) is 7.0ns typ and 20ns max when VDD is 30V, ID is 0.2A,RL is 150, VGEN is 10V and RGEN is 25.etc.