2N7372

Features: Planar Process for ReliabilityFast SwitchingHigh-Frequency Power TransistorsFor Complementary Use with Each Other15 mj Reverse Energy Rating with IC= 10MA and 4 V Reverse BiasSimilar to 2N5004 and 2N5005 but JEDEC TO-254AA PackageLeads can be FormedAll Terminals Isolated from the CaseApp...

product image

2N7372 Picture
SeekIC No. : 004219634 Detail

2N7372: Features: Planar Process for ReliabilityFast SwitchingHigh-Frequency Power TransistorsFor Complementary Use with Each Other15 mj Reverse Energy Rating with IC= 10MA and 4 V Reverse BiasSimilar to 2N...

floor Price/Ceiling Price

Part Number:
2N7372
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/19

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case



Application

Power Supply
Inverters and Converters
General Purpose Amplifiers



Specifications

SYMBOL CHARACTERISTIC 2N7372 2N7373 UNITS
VCBO
VCEO
VEBO
Collector-Base Voltage
Collector-Emitter
VoltageEmitter-Base Voltage
- 100
- 80
- 5.5
100
80
5.5
V
V
V
IC
IC
IB
Continuous Collector Current
Peak Collector Current
Continuous Base Current
5
10
2
5
10
2
A
A
A
TSTG
TJ
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from cast for 10 sec.
Unclamped Inductive Load Energy
-65 to 200
-65 to 200
300
15



mj
PT Continuous Device
Dissipation TC = 25
TC = 100
58
33
58
33
W
W
JC Thermal Resistance Junction to Case 3 3 /W



Description

These power transistors of 2N7372 are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter reversed biased.


Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to permit operating temperature to 200. The hermetically sealed package insures maximum reliability and long life. The isolated low profile package of 2N7372 allows for easy PC board fit.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Semiconductor Modules
Circuit Protection
Sensors, Transducers
Optical Inspection Equipment
View more