Features: ·High speed (tf=100ns typ).·High reliability (HVP process).·High breakdown voltage (VCBO=1600V).·Adoption of MBIT process.·On-chip damper diode.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collec...
2SC5041: Features: ·High speed (tf=100ns typ).·High reliability (HVP process).·High breakdown voltage (VCBO=1600V).·Adoption of MBIT process.·On-chip damper diode.PinoutSpecifications Parameter Sym...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
1600 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
800 |
V | |
| Emitter-to-Base Voltage |
VEBO |
6 |
V | |
| Collector Current |
IC |
7 |
A | |
| Collector Current (Pulse) |
ICP |
16 |
A | |
| Collector Dissipation |
PC |
3.0 |
W | |
|
Tc=25 |
60 |
W | ||
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature |
Tstg |
55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 1600 |
| VCEO [V] | 800 |
| IC [A] | 7 |
| PC[W] | 60
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 4 |
| hFE max | 7 |
| VCE [V] | 5 |
| IC [A] | 5 |
| VCE (sat) max [V] | 5 |
| IC [A] | 5 |
| IB [A] | 1.25 |
| tf max [µs] | 0.2 |