2SC5317FT

DescriptionThe 2SC5317FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application. 2SC5317FT has two features. (1)Low noise figure which would be 1.3dB at f=2GHz. (2)High gain which would be 9dB at f=2GHz. Those are all the main feature...

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SeekIC No. : 004223479 Detail

2SC5317FT: DescriptionThe 2SC5317FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application. 2SC5317FT has two features. (1)Low noise figure which...

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Part Number:
2SC5317FT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/4

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Product Details

Description



Description

The 2SC5317FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier application.

2SC5317FT has two features. (1)Low noise figure which would be 1.3dB at f=2GHz. (2)High gain which would be 9dB at f=2GHz. Those are all the main features.

Some absolute maximum ratings of 2SC5317FT have been concluded into several points as follow. (1)Its collector to base voltage would be 8V. (2)Its collector to emitter voltage would be 5V. (3)Its emitter to base voltage would be 1.5V. (4)Its collector current would be 20mA. (5)Its base current would be 10mA. (6)Its collector power dissipation would be 100mW. (7)Its junction temperature would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SC5317FT are concluded as follow. (1)Its collector cutoff current would be max 1uA with conditions of Vcb=8V and Ie=0. (2)Its emitter cutoff current would be max 1uA with conditions of Veb=1V and Ic=0. (3)Its DC current gain would be min 50 and max 250 with conditions of Vce=3V and Ic=15mA. (4)Its output capacitance would be typ 0.6pF with conditions of Vcb=2.5V, Ie=0 and f=1MHz. (5)Its reverse transfer capacitance would be typ 0.4pF and max 0.85pF with conditions of Vcb=2.5V, Ie=0 and f=1MHz. (6)Its transition frequency would be min 9GHz. (10)Its insertion gain would be min 12dB and typ 15dB at f=1Ghz and would be min 6dB and typ 9dB at 2GHz. (11)Its noise figure would be typ 0.9dB and max 1.8dB at 1GHz and would be typ 1.3dB and max 2.2dB at 2GHz.

It should be noted that the information about 2SC5317FT contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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