DescriptionThe 2SC5477-T122-1 is one member of the 2SC5477 family which is designed as the Silicon PNP epitaxial planer type device that can be used in high frequency amplify applications. And this device has two points of features:(1)super mini package for easy mounting;(2)high gain band width pr...
2SC5477-T122-1: DescriptionThe 2SC5477-T122-1 is one member of the 2SC5477 family which is designed as the Silicon PNP epitaxial planer type device that can be used in high frequency amplify applications. And this ...
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The 2SC5477-T122-1 is one member of the 2SC5477 family which is designed as the Silicon PNP epitaxial planer type device that can be used in high frequency amplify applications. And this device has two points of features:(1)super mini package for easy mounting;(2)high gain band width product.
The absolute maximum ratings of the 2SC5477-T122-1 can be summarized as:(1)Collector to base voltage: 30 V;(2)Collector to emitter voltage: 20 V;(3)Emitter to base voltage: 4 V;(4)Peak collector current: -200 mA;(5)Collector current: 50 mA;(6)Collector power dissipation: 150 mW;(7)Junction temperature: 150 °C;(8)Storage temperature: -55 °C to +150 °C.
The electrical characteristics of this device can be summarized as:(1)C to B break sown voltage: 30 V;(2)C to E break sown voltage: 20 V;(3)E to B break sown voltage: 4 V;(4)collector cut off current: 0.5 uA;(5)emitter cut off current: 0.5 uA;(6)DC forward current gain: 50 to 148;(7)C to E saturation voltage: 0.1 to 0.3 V;(8)Collector output capacitance: 1.2 to 1.5 pF;(9)gain band width product: 600 to 1100 MHz. If you want to know more information about the 2SC5477-T122-1, please download the datasheet in www.seekic.com or www.chinaicmart.com .