2SC5622

The 2SC5622 is Silicon NPN triple diffusion mesa type. It is designed for horizontal deflection output.

Here are features of the 2SC5622: (1)High breakdown voltage: 1,500 V; (2)High-speed switching; (3)Wide area of safe operation (ASO).

Absolute Maximum Ratings of 2SC5622 (TC = 25°C) are summerized as follows: (1)Collector to base voltage(VCBO): 1500 V; (2)Collector to emitter voltage(VCES): 1 500 V; (3)Emitter to base voltage9(VEBO): 7 V; (4)Peak collector current(ICP): 12 A; (5)Collector current(IC): 6 A; (6)Base current(IB): 3 A; (7)Collector power(TC = 25°C,  PC): 40 W; (8)dissipation(Ta = 25°C): 3; (9)Junction temperature: Tj 150 °C; (10)Storage temperature(Tstg): -55 to +150 °C.

Electrical Characteristics of 2SC5622 (TC = 25°C ± 3°C) are listed as below: (1)Collector cutoff current(ICBO): <50 A with test conditions of VCB = 1 000 V, IE = 0; <1 mA with test conditions of VCB = 1 500 V, IE = 0; (2)Emitter to base voltage VEBO:<7 V with test conditions of IE = 500 mA, IC = 0 ; (3)Forward current transfer ratio(hFE): 5 to 9 with test conditions of VCE = 5 V, IC = 4 A ; (4)Collector to emitter saturation voltage VCE(sat): <5 V with test conditions of IC = 4 A, IB = 0.8 A ; (5)Base to emitter saturation voltage VBE(sat):<1.5 V with  test conditions of IC = 4 A, IB = 0.8 A ; (6)Transition frequency(fT):typ:3 MHz with test conditions of VCE = 10 V, IC = 0.1 A, f = 0.5 MHz ; (7)Diode forward voltage(VF):<-2 V with test conditions of IF = 4 A ; (8)Storage time(tstg):<5.0 s with test conditions of IC = 4 A, Resistance loaded ; (9)Fall time(tf):<0.5 s with test conditions of IB1 = 0.8 A, IB2 = .1.6 A.