2SC5658M3T5G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.1 A
Maximum Operating Frequency : 180 MHz
Package / Case : SOT-723
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V


Features:

• Reduces Board Space
• High hFE, 210−460 (typical)
• Low V_CE(sat), < 0.5 V
• ESD Performance: Human Body Model; > 2000 V, 
                                Machine Model; >200 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• This is a Pb−Free Device


Pinout




Specifications

Rating	Symbol	Value	Unit
Collector−Base Voltage	V(BR)CBO	50	Vdc
Collector−Emitter Voltage	V(BR)CEO	50	Vdc
Emitter−Base Voltage	V(BR)EBO	5.0	Vdc
Collector Current − Continuous	IC	100	mAdc

Parameters:

Technical/Catalog Information	2SC5658M3T5G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	260mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 60mA
Frequency - Transition	180MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-723
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SC5658M3T5G 2SC5658M3T5G 2SC5658M3T5GOSCT ND 2SC5658M3T5GOSCTND 2SC5658M3T5GOSCT