Features: • High speed.• High breakdown voltage(VCBO=1600V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector...
2SC5791: Features: • High speed.• High breakdown voltage(VCBO=1600V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.PinoutSpecifications Parameter Sy...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
1600 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
800 |
V | |
| Emitter-base voltage |
VEBO |
5 |
V | |
| Collector current |
IC |
0 |
A | |
| Collector current(Pulse) |
ICP |
25 |
A | |
| Collector Dissipation |
PC |
3.0 |
W | |
| Tc=25°C |
80 |
W | ||
| Junction temperature |
Tj |
150 |
||
| Storage temperature |
Tstg |
55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 1600 |
| VCEO [V] | 800 |
| IC [A] | 10 |
| PC[W] | 80
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 4 |
| hFE max | 7 |
| VCE [V] | 5 |
| IC [A] | 7 |
| VCE (sat) max [V] | 3 |
| IC [A] | 6.3 |
| IB [A] | 1.6 |
| tf max [µs] | 0.2 |