2SD2170 T100 R

The 2SD2170 T100 R is designed as one kind of medium power transistor that has some points of features:(1)Built-in zener diode between collector and base; (2)Zener diode has low dispersion; (3)Strong protection against reverse power surges due to "L" loads; (4)Darlington connection for high DC current gain; (5)Built-in resistor between base and emitter; (6)Built-in damper diode.

The absolute maximum ratings of the 2SD2170 T100 R can be summarized as:(1)Collector-base voltage: 90 V;(2)Collector-emitter voltage: 90 V;(3)Emitter-base voltage: 6 V;(4)Collector current: 2 or 3 A;(5)Collector power dissipation: 0.5 or 2 W;(6)Junction temperature: 150 °C;(7)Storage temperature: -55 °C to +150 °C.

The electrical characteristics of 2SD2170 T100 R can be summarized as:(1)Collector-base breakdown voltage: 80 to 110 V;(2)Collector-emitter breakdown voltage: 80 to 110 V;(3)Collector cutoff current: 10 uA;(4)Emitter cutoff current: 3 mA;(5)Collector-emitter saturation voltage: 1.5 V;(6)DC current transfer ratio: 1000 to 10000;(7)Transition frequency: 80 MHz;(8)Output capacitance: 25 pF. If you want to know more information about the 2SD2170 T100 R, please download the datasheet in www.seekic.com or www.chinaicmart.com .