2SJ107 Selling Leads, Price trend, 2SJ107 DataSheet download, circuit diagram from SeekIC.com

Application• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)• Low RDS (ON): RDS (ON) = 40 (typ.)• Small package• Complementary to 2SK366Specifications Characteristics Unit Unit Unit Gate-drain voltage VGDS 25 V Gate current IG −10 V Drai...

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SeekIC No. : 004225011 Detail

2SJ107: Application• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)• Low RDS (ON): RDS (ON) = 40 (typ.)• Small package• Complementary to 2SK366Specifications Characteri...

2SJ107 Data Sheet

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Part Number:: 2SJ107
Supply Ability:: 5000

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Upload time: 2025/12/7

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2SJ103 evaluate
Application• High breakdown voltage: VGDS = 50 V• High input impedance: IGSS = 1.0 nA ...
2SJ104 evaluate
Application`High input impedance: IGSS= 1.0 nA (max) (VGS= 25 V)`Low RDS(ON)= 40(typ.) (IDSS= 5 mA...
2SJ105 evaluate
Application• High breakdown voltage: VGDS = 50 V• High input impedance: IGSS = 1.0 nA ...

Product Details

Description

Application

• High input impedance: I_GSS = 1.0 nA (max) (V_GS= 25 V)
• Low R_{DS (ON)}: R_{DS (ON)} = 40 (typ.)
• Small package
• Complementary to 2SK366

Specifications

Characteristics	Unit	Unit	Unit
Gate-drain voltage	V_GDS	25	V
Gate current	I_G	−10	V
Drain power dissipation	P_D	200	mW
Junction temperature	T_j	125
Storage temperature range	T_stg	−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc)

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2SJ107

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