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2SJ108
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DataSheet
General Description
2SJ108 Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Supply Voltage | VGDS | 25 | V |
| Gate current | IG | 10 | mA |
| Drain power dissipation | PD | 200 | mW |
| Junction temperature | Tj | 125 | |
| Storage temperature | TSTG | −55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SJ108 Typical Application
• Recommended for first stages of EQ amplifiers and MC head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA)
• Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz)
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
• Complementary to 2SK370
• Small package
• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA)
• Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz)
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
• Complementary to 2SK370
• Small package
2SJ108
PDF/DataSheet Download
- Datasheet: 2SJ108
- File Size: 227735 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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