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2SJ312

Application4-V gate driveLow drain−source ON resistance : RDS (ON) = 80 m (typ.)High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = −100 A (max) (VDS = −60 V) Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)Sp...

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2SJ312: Application4-V gate driveLow drain−source ON resistance : RDS (ON) = 80 m (typ.)High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = −100 A (max) (VDS = &...

2SJ312 Data Sheet

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Part Number:
2SJ312
Supply Ability:
5000

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Product Details

Description



Application

 4-V gate drive
Low drain−source ON resistance : RDS (ON) = 80 m (typ.)
High forward transfer admittance : |Yfs| = 8.0 S (typ.)
Low leakage current : IDSS = −100 A (max) (VDS = −60 V)
Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 k)
VGSS
−60
V
Gate−source voltage
VG2S
±20
V
Drain current DC (Note 1)
ID
−14
A
Pulse (Note 1)
IDP
−56
Drain power dissipation (Tc = 25)
PD
40
W
Channel temperature
Tch
150
Storage temperature range
TSTG
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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