Features: · Low on-resistance· High speed switching· Low drive current· 4 V gate drive device can be driven from 5 V source· Suitable for switching regulator, DC-DC converterApplication·High speed power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 20 ...
2SJ318(S): Features: · Low on-resistance· High speed switching· Low drive current· 4 V gate drive device can be driven from 5 V source· Suitable for switching regulator, DC-DC converterApplication·High speed p...
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| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 20 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 5 | A |
| Drain peak current | ID(pulse)*1 | 20 | A |
| Body to drain diode reverse drain curre | IDR | 5 | A |
| Channel dissipation | Pch*2 | 20 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |