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2SJ349
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DataSheet
General Description
2SJ349 Maximum Ratings
| Characteristics |
Symbol |
Ratings |
Unit | |
| Drain-source voltage |
VDSS |
−60 |
V | |
| Drain-gate voltage (RGS=20 k) |
VDGR |
−60 |
V | |
| Gate-source voltage |
VGSS |
±20 |
V | |
| Drain current | DC(Note 1) |
ID |
−20 |
A |
| Pulse (Note 1) |
IDP |
−80 |
A | |
| Drain power dissipation (Tc = 25) |
PD |
45 |
W | |
| Single-pulse avalanche energy (Note2) |
EAS |
800 |
mJ | |
| Avalanche current |
IAR |
−20 |
A | |
| Repetitive avalanche energy (Note 3) |
EAR |
4.5 |
mJ | |
| Channel temperature |
Tch |
150 |
||
| Storage temperature range |
Tstg |
−55~150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SJ349 Typical Application
4-V gate drive
Low drain−source ON resistance : RDS (ON) = 33 m (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current : IDSS = −100 A (max) (VDS = −60 V)
Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Low drain−source ON resistance : RDS (ON) = 33 m (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current : IDSS = −100 A (max) (VDS = −60 V)
Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
2SJ349
PDF/DataSheet Download
- Datasheet: 2SJ349
- File Size: 296751 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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