2SJ349(F)

The 2SJ349(F) is a kind of TOSHIBA field effect transistor, silicon P channel MOS type which is desiged for the high speed, high current switching and DC-DC converter, relay drive and motor drive applications. Features of 2SJ349(F) are:(1)enhancement-mode: Vth= -0.8 to -2.0 V;(2)low leakage current: I DSS= -100 uA (max.);(3)high forward transfer admittance: Yfs = 20.0 s (typ.);(4)low drain-source ON resistance: R DS(ON)= 0.033 (typ.);(5)4 V gate drive.

The absolute maximum ratings of 2SJ349(F) can be summerized as:(1): drain-source voltage, VDSS is -60 V; (2): gate-source voltage is +/- 20 V; (3): DC drain current, ID is -20 A; (5): drain power dissipation (Ta is 25) is 35 W; (6): channel temperature, Tch is 150 ; (7): storage temeprature range, tstg is -55 to 150 ; (8)single pulse avalanche energy is 800 mJ.

The electrical characteristics of 2SJ349(F) can be summerized as:(1): gate leakage current, IGSS is +/-10 uA; (2): drain-source breakdown voltage, V(BR)DSS is -60 V; (3): drain cut-off current, IDSS is -100 uA; (4): input capacitance: 2800 pF; (5): output capacitance is 1300 pF; (6) reverse transfer chapacitance is 450 pF; (7)gate source charge is 65 nC and (8)gate-drain charge is 25 nC. If you want to know more information such as the electrical characteristics about 2SJ349(F), please download the datasheet in www.seekic.com or www.chinaicmart.com.