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2SJ352-E

MOSFET P-CH 200V 8A TO-3P

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SeekIC No. : 003430981 Detail

2SJ352-E: MOSFET P-CH 200V 8A TO-3P

2SJ352-E Data Sheet

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Part Number:
2SJ352-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: - DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 800pF @ 10V
Power - Max: 100W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 8A
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 100W
Manufacturer: Renesas Electronics America
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P


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