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2SJ360(F)

MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V

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SeekIC No. : 00152335 Detail

2SJ360(F): MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V

2SJ360(F) Data Sheet

floor Price/Ceiling Price

US $ .34~.41 / Piece | Get Latest Price
Part Number:
2SJ360(F)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.41
  • $.38
  • $.35
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 0.73 Ohms Configuration : Single
Mounting Style : SMD/SMT Package / Case : PW-MINI
Packaging : Reel    

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : 1 A
Package / Case : PW-MINI
Resistance Drain-Source RDS (on) : 0.73 Ohms


Parameters:

Technical/Catalog Information2SJ360(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs730 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 155pF @ 10V
Power - Max500mW
PackagingBulk
Gate Charge (Qg) @ Vgs6.5nC @ 10V
Package / Case*
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ360 F
2SJ360F



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