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2SJ412(Q)

MOSFET P-CH 100V 16A TO-220FL

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SeekIC No. : 003434043 Detail

2SJ412(Q): MOSFET P-CH 100V 16A TO-220FL

2SJ412(Q) Data Sheet

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Part Number:
2SJ412(Q)
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 16A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 48nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Power - Max: 60W Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab Supplier Device Package: TO-220FL    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 16A
Drain to Source Voltage (Vdss): 100V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 60W
Gate Charge (Qg) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-220-3, Short Tab
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V
Supplier Device Package: TO-220FL


Parameters:

Technical/Catalog Information2SJ412(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs210 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 10V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ412 Q
2SJ412Q
2SJ412Q ND
2SJ412QND
2SJ412Q



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