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2SJ412(TE24L,Q)

MOSFET P-CH 100V 16A TO-220SM

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SeekIC No. : 003434044 Detail

2SJ412(TE24L,Q): MOSFET P-CH 100V 16A TO-220SM

2SJ412(TE24L,Q) Data Sheet

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Part Number:
2SJ412(TE24L,Q)
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 16A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 48nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Power - Max: 60W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-220SM    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 16A
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max: 60W
Gate Charge (Qg) @ Vgs: 48nC @ 10V
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V
Supplier Device Package: TO-220SM


Parameters:

Technical/Catalog Information2SJ412(TE24L,Q)
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs210 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 10V
Power - Max60W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseTO-220SM
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ412 TE24L,Q
2SJ412TE24L,Q
2SJ412QDKR ND
2SJ412QDKRND
2SJ412QDKR



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