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MFG:TOS Package Cooled:658 D/C:IC

MFG:TOS Package Cooled:658 D/C:IC

|
Characteristics |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage |
VCES |
-100 |
V | |
| Drain-gate voltage (RGS = 20 k) |
VDGR |
−100 |
V | |
| Gate-emitter voltage |
VEBS |
±20 |
V | |
| Collector current |
DC (Note1) |
ID |
-18 |
A |
| Pulse (Note1) |
IDP |
-72 | ||
| Diode forward current |
DC |
IF |
30 |
A |
|
1 ms |
IFP |
120 | ||
| Collector power dissipation @ Tc = 25 |
PD |
45 |
W | |
| Single pulse avalanche energy(Note2) |
EAS |
937 |
mJ | |
| Avalanche current |
IAR |
−18 |
A | |
| Repetitive avalanche energy (Note3) |
EAR |
4.5 |
mJ | |
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
-55 to 150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SJ464
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