2SJ474-01L

The 2SJ474-01L is designed as one kind of P-channel enhancement mode power MOSFET that can be used for switching application. The absolute maximum ratings of 2SJ474-01L can be summarized as:(1)drain-source voltage: -60 V;(2)continuous drain current: +/- 7 A;(3)pulsed drain current: +/- 28 A;(4)gate-source voltage: +/- 20 V;(5)maximum avalanche energy: 110.8 mJ;(6)maximum power dissipation: 20 W;(7)operating and storage: 150 ;(8)temperature range: -55 to +150 .

The electrical characteristics of the 2SJ474-01L can be summarized as:(1)drain-source breakdown voltage: -60 V;(2)gate threshold voltage: -1.0 to -2.5 V;(3)zero gate voltage drain current Tch=25: -10 to -500 uA;(4)zero gate voltage drain current Tch=125: -0.2 to -1.0 mA;(5)gate source leakage current: 10 to 100 nA;(6)input capacitance: 550 to 830 pF;(7)output capacitance: 200 to 300 pF;(8)reverse transfer capacitance: 110 to 170 pF;(9)reverse recovery time: 110 ns;(10)reverse recovery change: 0.5 uc. If you want to know more information about the 2SJ474-01L, please download the datasheet in www.seekic.com or www.chinaicmart.com.