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2SJ483

Features: ` Low on-resistanceRDS(on) = 0.08W typ (at VGS = 10 V, ID = 2.5 A)` 4V gate drive devices.` Large current capacitanceID = 5 ASpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID -5 ...

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2SJ483: Features: ` Low on-resistanceRDS(on) = 0.08W typ (at VGS = 10 V, ID = 2.5 A)` 4V gate drive devices.` Large current capacitanceID = 5 ASpecifications Parameter Symbol Ratings Unit Drain t...

2SJ483 Data Sheet

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Part Number:
2SJ483
Supply Ability:
5000

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Product Details

Description



Features:

`  Low on-resistance
RDS(on) = 0.08W typ (at VGS = 10 V, ID = 2.5 A)
`  4V gate drive devices.
`  Large current capacitance
ID = 5 A




Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID -5 A
Drain Current (pulse) ID(pulse) Note1 -20 A
Body to drain diode reverse drain current IDR -5 A
Total Power Dissipation Pch 0.9 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C


Note: 1. PW 10ms, duty cycle 1 %




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