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2SJ598

Features: • Low on-state resistance: RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 190 m MAX. (VGS = 4.0 V, ID = 6 A)• Low Ciss: Ciss = 720 pF TYP.• Built-in gate protection diode• TO-251/TO-252 packageSpecifications Item Symbol Rating Unit Drai...

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SeekIC No. : 004225319 Detail

2SJ598: Features: • Low on-state resistance: RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 190 m MAX. (VGS = 4.0 V, ID = 6 A)• Low Ciss: Ciss = 720 pF TYP.• Built-in gate protect...

2SJ598 Data Sheet

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Part Number:
2SJ598
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance:
   RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A)
   RDS(on)2 = 190 m MAX. (VGS = 4.0 V, ID = 6 A)
• Low Ciss:    Ciss = 720 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package


Specifications

Item
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
-60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±12
A
Drain peak currentDrain Current (pulse) Note1
ID(pulse)
±30
A
Total Power Dissipation (TC = 25°C)
PT
23
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
-55to+150
°C
Single Avalanche Current Note2
IAS
-12
A
Single Avalanche Energy Note2
EAS
14.4
mJ
Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V


Description

The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.


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