2SJ652

MOSFET POWER MOSFET

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2SJ652 Picture
SeekIC No. : 00153475 Detail

2SJ652: MOSFET POWER MOSFET

floor Price/Ceiling Price

US $ 1.84~3.11 / Piece | Get Latest Price
Part Number:
2SJ652
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $3.11
  • $2.5
  • $2.27
  • $1.84
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 28 A
Resistance Drain-Source RDS (on) : 28.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220ML Packaging : Bulk    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Packaging : Bulk
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : - 28 A
Resistance Drain-Source RDS (on) : 28.5 mOhms
Package / Case : TO-220ML


Features:

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Motor drive, DC / DC converter.





Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID -28 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% -112 A
Allowable Power Dissipation PD 2.0 W
Tc=25 30 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +150


Absolute maximum ratings
VDSS [V] 60
VGSS [V] 20
ID [A] 28
PD [W] 30
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=14
0.0285
RDS(on) typ []
VGS=4V
ID [A]=14
0.039
VGS(off) min [V] 1.2
VGS(off) max [V] 2.6
|yfs| typ [S] 26
Ciss typ [pF] 4360
Qg typ [nC] 80





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