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2SJ668

Application4 V gate driveLow drain−source ON-resistance: RDS (ON) = 0.12 (typ.)High forward transfer admittance: |Yfs| = 5.0 S (typ.)Low leakage current: IDSS = −100 A (max) (VDS = −60 V)Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)Spec...

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2SJ668: Application4 V gate driveLow drain−source ON-resistance: RDS (ON) = 0.12 (typ.)High forward transfer admittance: |Yfs| = 5.0 S (typ.)Low leakage current: IDSS = −100 A (max) (VDS = W...

2SJ668 Data Sheet

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Part Number:
2SJ668
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

4 V gate drive
Low drain−source ON-resistance: RDS (ON) = 0.12 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = −100 A (max) (VDS = −60 V)
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
−60
V
Drain-gate voltage (RGS=20 k)
VDGR
−60
V
Gate to Source voltage
VGSS
±20
V
Drain current DC(Note 1)
ID
−5
A
Pulse(Note 1)
IDP
−20
Drain power dissipation (Tc-25)
PD
 20
W
Single pulse avalanche energy (Note 2)
EAS
40.5
mJ
Avalanche current
IAR
−5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
 −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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