2SK1489(Q), US $ 5.63-9.37 , Toshiba, 2SK1489(Q) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00152356 Detail

2SK1489(Q): MOSFET MOSFET N-Ch 1000V 12A Rdson 1 Ohm

2SK1489(Q) Data Sheet

US $ 5.63~9.37 / Piece | Get Latest Price

Part Number:: 2SK1489(Q)
Mfg:: Toshiba
Supply Ability:: 5000

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10~100
100~250

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$9.37
$7.5
$6.38
$5.63

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15 Days
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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	12 A
Resistance Drain-Source RDS (on) :	1 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-3P
Packaging :	Bulk

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1 Ohms

Parameters:

Technical/Catalog Information	2SK1489(Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	1 Ohm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3P(L) (2-21F1B)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK1489 Q 2SK1489Q

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2SK1489(Q)

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