2SK3625

DescriptionThe 2SK3625 is a kind of TOSHIBA field effect transistor which is desiged for the high speed, high current switching applications and switching regulator, DC to DC converter as well as motor drive applications.Features of 2SK3625 are:(1)low drain-source ON resistance: RDS(ON) is 0.2 ohm...

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SeekIC No. : 004226794 Detail

2SK3625: DescriptionThe 2SK3625 is a kind of TOSHIBA field effect transistor which is desiged for the high speed, high current switching applications and switching regulator, DC to DC converter as well as mo...

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Part Number:
2SK3625
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Description



Description

The 2SK3625 is a kind of TOSHIBA field effect transistor which is desiged for the high speed, high current switching applications and switching regulator, DC to DC converter as well as motor drive applications.Features of 2SK3625 are:(1)low drain-source ON resistance: RDS(ON) is 0.2 ohms typ; (2)high forward transfer admittance: Yfs is 7.0 S typ; (3)enhancement-mode: Vth is 2.0 V to 4.0 V(VDS is 10 V and ID is 1 mA); (4)low leakage current: IDSS is 100 uA max when VDS is 500 V.

The absolute maximum ratings of 2SK3625 can be summerized as:(1): drain-source voltage, VDSS is 700 V; (2): drain-gate voltage(RGS is 20 kohms), VDGR is 700 V; (3): gate-source voltage, VGSS is ±30 V; (4): DC drain current, ID is 10 A; (5): drain power dissipation(ta is 25), PD is 45 W; (6): single pulse avalanche ennergy, EAS is 420 mJ; (7): avalanche current, IAR is 10 A; (8): repetitive avalanche energy, EAR is 4.5 mJ; (9): channel temperature, Tch is 150; (10): storage temeprature range, tstg is -55 to 150.

The electrical characteristics of 2SK3625 can be summerized as:(1): gate leakage current, IGSS is ±10 A max when VGS is ±25 V and VDS is 0 V; (2): drain-source breakdown voltage, V(BR)DSS is 700 V min when IG is 10 mA and VGS is 0 V; (3): drain cut-off current, IDSS is 100 uA max when VDS is 100 A and VGS is 0 V; (4): input capacitance, Ciss is 1700 pF typ when VDS is 10 V , VGS is 0 V and f is 1 MHz; (5): gate threshold voltage, Vth is 2.0 V min and 4.0 V max when VDS is 10 V and ID is 1 mA; (6): drain-source ON resistance, RDS(ON) is 0.72 ohm typ and 0.75 ohm max when VGS is 10 V and ID is 5 A.


 




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