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2SK4014

Application`􀁺 Low drain−source ON-resistance : RDS (ON) = 1.6 (typ.)`􀁺 High forward transfer admittance : |Yfs| = 5.0 S (typ.)`􀁺 Low leakage current : IDSS = 100 A (max) (VDS = 720 V)`􀁺 Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specificati...

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2SK4014: Application`􀁺 Low drain−source ON-resistance : RDS (ON) = 1.6 (typ.)`􀁺 High forward transfer admittance : |Yfs| = 5.0 S (typ.)`􀁺 Low leakage current : IDSS = 100 A ...

2SK4014 Data Sheet

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Part Number:
2SK4014
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

`􀁺 Low drain−source ON-resistance : RDS (ON) = 1.6 (typ.)
`􀁺 High forward transfer admittance : |Yfs| = 5.0 S (typ.)
`􀁺 Low leakage current : IDSS = 100 A (max) (VDS = 720 V)
`􀁺 Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Symbol Characteristic Rating Unit
VDSS Drain-Source Voltage 900 V
VDGR Drain−gate voltage (RGS = 20 k) 900 V
VGSS Gate−source voltage ±30
 V
ID

IDP		 Drain current DC (Note 1) 6 A
Pulse (Note 1) 18
PD Drain power dissipation (Tc=25) 45 W
EAS Single-pulse avalanche energy
(Note 2)		 972 mJ
IAR Avalanche current 6 A
EAR Repetitive avalanche energy (Note 3) 15 mJ
Tch Channel temperature 150
Tstg Storage temperature range −55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling  recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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