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2SK4020

Application4-V gate driveLow drain−source ON-resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 200 V)Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Sym...

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SeekIC No. : 004227001 Detail

2SK4020: Application4-V gate driveLow drain−source ON-resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 200 V)...

2SK4020 Data Sheet

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Part Number:
2SK4020
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

4-V gate drive
Low drain−source ON-resistance : RDS (ON) = 0.56 (typ.)
High forward transfer admittance : |Yfs| = 4.5 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 200 V)
Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain−gate voltage (RGS = 20 k)
VDGR
200
V
Gate−source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
5
A
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25)
PD
120
W
Single pulse avalanche energy
                                             (Note 2)
EAS
65
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
Storage temperature range
TSTG
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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