2SK4171

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 135nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 100A
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Packaging: Bulk
Power - Max: 1.75W
Manufacturer: ON Semiconductor
Input Capacitance (Ciss) @ Vds: 6900pF @ 20V
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 10V


Features:

• Low ON-resistance.
• Load switching applications.
• Motor drive applications.
• Avalanche resistance guarantee.




Pinout






Specifications

Absolute maximum ratings
VDSS [V]	60
VGSS [V]	20
ID [A]	100
PD [W]	75 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=50	0.0055
RDS(on) typ [] VGS=4V ID [A]=50	0.0075
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	60
Ciss typ [pF]	6900
Qg typ [nC]	135

Parameter	Symbol	Conditions	Ratings	UNIT
Drain to Source Voltage	VDSS		60	V
Gate to Source Voltage	VGSS		±20	V
Drain Current (DC)	ID		100	A
Drain Current (Pulse)	IDP	PW10s, duty cycle1%	400	A
Total Power Dissipation	PD		1.75	W
		Tc=25	75
Channel Temperature	Tch		150
Storage Temperature	Tstg		55 to +150
Single Avalanche Current *3	IAV		65	A
Single Avalanche Energy *3	EAS		370	mJ

Note : *1 V_DD=30V, L=100H
*2 L100H, Single pulse
Marking : K4171