Application• High |Yfs|: |Yfs| = 25 mS (typ.)• Low Ciss: Ciss = 7.5 pF (typ.)Specifications Characteristics Symbol Rating Unit Gate-drain voltage VGDS -20 V Gate current IG 10 mA Drain power dissipation PD 150 mW Junction temperature Tj 125 Storage t...
2SK711: Application• High |Yfs|: |Yfs| = 25 mS (typ.)• Low Ciss: Ciss = 7.5 pF (typ.)Specifications Characteristics Symbol Rating Unit Gate-drain voltage VGDS -20 V Gate current...
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Characteristics | Symbol | Rating | Unit |
Gate-drain voltage | VGDS | -20 | V |
Gate current | IG | 10 | mA |
Drain power dissipation | PD | 150 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | −55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).