Transistors Bipolar (BJT) LOW VOLTAGE FAST SWITCHING PNP POWER
2STR2160: Transistors Bipolar (BJT) LOW VOLTAGE FAST SWITCHING PNP POWER
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| Packaging : | Reel |
| SYMBOL | PARAMETER | CONDITIONS | Rating | Unit |
| VCBO | Collector-base voltage (IE= 0) | Open emitter | -60 | V |
| VCEO | Collector-emitter voltage (IB = 0) | Open collector | -60 | V |
| VEBO | Emitter-base voltage (IC = 0) | -5 | ||
| IC | Collector current | -1 | A | |
| ICM | Collector current-peak | -2 | A | |
| Ptot | Total dissipation at Tamb = 25 | TC=25 |
0.5 |
W |
| Tj | Junction temperature | 150 | ||
| Tstg | Storage temperature | -65 to 150 |
The 2STR2160 in a PNP transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STR1160.