2STR2230

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
DC Collector/Base Gain hfe Min : 70
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 100 MHz
Package / Case : SOT-23
Maximum DC Collector Current : 1.5 A
Collector- Emitter Voltage VCEO Max : 30 V


Features:

· Very low collector-emitter saturation voltage
· High current gain characteristic
· Fast switching speed
· Miniature SOT-23 plastic package for surface mounting circuits
· In compliance with the 2002/93/EC European Drective


Application

· LED
· Motherboard & hard disk drive
· Mobile equipment
· Battery charger
· Voltage regulation


Specifications

SYMBOL	PARAMETER	RATING	UNIT
VCBO	Collector to base voltage(VCE = 0)	-30	V
VCEO	Collector to emitter voltage(IB = 0)	-30	V
VEBO	Emitter to base voltage(IC = 0)	-5	V
IC	Collector current	-1.5	A
ICM	Collector peak current(tP < 5ms)	-3	A
Ptot	Total dissipation at Tamb = 25°C	0.5	W
Tj	Junction temperature	150
Tstg	Storage temperaturerange	-65 to +150

Description

The 2STR2230 is a PNP transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary NPN is the 2STR1230.

Parameters:

Technical/Catalog Information	2STR2230
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1.5A
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	170 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	450mV @ 100mA, 1A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STR2230 2STR2230 497 5686 2 ND 49756862ND 497-5686-2