2STR1160

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-23
Maximum DC Collector Current : 1 A


Features:

·Very low collector-emitter saturation voltage
·High current gain characteristic
·Fast switching speed
·Miniature SOT-23 plastic package for surface mounting circuits


Application

·LED
·Battery charger
·Motor and relay driver
·Voltage regulation


Description

The 2STR1160 in a NPN transistor manufactured using new "PB-HCD" (Pow Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances  coupled with very low saturation voltage.

The complementary PNP is the 2STR2160.

Parameters:

Technical/Catalog Information	2STR1160
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	210mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3
Packaging	Digi-Reel?
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STR1160 2STR1160 497 6960 6 ND 49769606ND 497-6960-6