Transistors Bipolar (BJT) NPN power transistor
2STR1230: Transistors Bipolar (BJT) NPN power transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 30 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1.5 A | ||
DC Collector/Base Gain hfe Min : | 210 at 50 mA at 2 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
SYMBOL | PARAMETER | Value | UNIT |
VCBO | Collector-base voltage (IE = 0) | 30 | V |
VCBO | Collector-emitter voltage (IB = 0) | 0 | V |
VEBO | Emitter-base voltage (IC= 0) | 5 | V |
IC | Collector current | 1.5 | A |
ICM | Collector peak current (tP < 5ms) | 3 | A |
PTOT | Total dissipation at TC = 25 | 0.5 | W |
TJ | Storage temperature | 150 | |
Tstg | Max. operating junction temperature | -65 to 200 |
The 2STR1230 is a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2230.
Technical/Catalog Information | 2STR1230 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 1.5A |
Power - Max | 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2STR1230 2STR1230 497 5685 2 ND 49756852ND 497-5685-2 |