2STR1230

Transistors Bipolar (BJT) NPN power transistor

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SeekIC No. : 00205600 Detail

2STR1230: Transistors Bipolar (BJT) NPN power transistor

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Part Number:
2STR1230
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

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  • 100~250
  • Unit Price
  • $.08
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 210 at 50 mA at 2 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-23
Maximum DC Collector Current : 1.5 A
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 210 at 50 mA at 2 V


Features:

Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface mounting circuits
In compliance with the 2002/93/EC European Directive



Application

LED
Motherboard & hard disk drive
Mobile equipment
Battery charger
Voltage regulation



Specifications

SYMBOL PARAMETER Value UNIT
VCBO Collector-base voltage (IE = 0) 30 V
VCBO Collector-emitter voltage (IB = 0) 0 V
VEBO Emitter-base voltage (IC= 0) 5 V
IC Collector current 1.5 A
ICM Collector peak current (tP < 5ms) 3 A
PTOT Total dissipation at TC = 25 0.5 W
TJ Storage temperature 150
Tstg Max. operating junction temperature -65 to 200



Description

The 2STR1230 is a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary PNP is the 2STR2230.




Parameters:

Technical/Catalog Information2STR1230
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)1.5A
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2STR1230
2STR1230
497 5685 2 ND
49756852ND
497-5685-2



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