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40MT120UH

Features: •UltraFast Non Punch Through (NPT) Technology• Positive VCE(ON)Temperature Coefficient• 10s Short Circuit Capability• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery• Low Diode VF• Square RBSOA• Aluminum Nitride DBC• Optional...

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40MT120UH: Features: •UltraFast Non Punch Through (NPT) Technology• Positive VCE(ON)Temperature Coefficient• 10s Short Circuit Capability• HEXFRED TM Antiparallel Diodes with UltraSoft ...

40MT120UH Data Sheet

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Part Number:
40MT120UH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

•UltraFast Non Punch Through (NPT) Technology
• Positive VCE(ON)Temperature Coefficient
• 10s Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
• Low Diode VF
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for High Speed Operation
• UL approved (file E78996)


Specifications

Parameters Max Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
I C Continuos Collector Current
 TC = 25°C
 80 A
@ TC = 105°C 40
I CM Pulsed Collector Current 160
I LM Clamped Inductive Load Current 160
I F Diode Continuous Forward Current @ TC = 105°C 21
I FM Diode Maximum Forward Current 160
VGE Gate-to-Emitter Voltage ± 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
PD Maximum Power Dissipation (only IGBT) @ TC = 25°C 463 W
@ TC = 100°C 185



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