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40MT120UHA

Features: • UltraFast Non Punch Through (NPT) Technology• Positive VCE(ON)Temperature Coefficient• 10s Short Circuit Capability• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery and Low VF• Square RBSOA• Al2 O3 DBC• Optional SMD Thermistor (N...

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40MT120UHA: Features: • UltraFast Non Punch Through (NPT) Technology• Positive VCE(ON)Temperature Coefficient• 10s Short Circuit Capability• HEXFRED TM Antiparallel Diodes with UltraSoft...

40MT120UHA Data Sheet

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Part Number:
40MT120UHA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Description



Features:

• UltraFast Non Punch Through (NPT) Technology
• Positive VCE(ON)Temperature Coefficient
• 10s Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with
  UltraSoft Reverse Recovery and Low VF
• Square RBSOA
• Al2 O3 DBC
• Optional SMD Thermistor (NTC)
• Very Low Stray Inductance Design for
  High Speed Operation


Specifications

Parameters Max Units
VCES Collector-to-Emitter Voltage 1200 V
IC Continuos Collector Current @ TC = 22°C 80 A
@ TC = 104°C 40
ICM Pulsed Collector Current 160 A
ILM Peak Switching Current 160 A
I F Diode Continuous Forward Current @ TC = 105°C 21 A
IFM Peak Diode Forward Current 160 A
VGE Gate-to-Emitter Voltage +20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
PD Maximum Power
Dissipation		 IGBT@ TC = 22°C 463 W
IGBT@ TC = 100°C 185



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