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4AM17

Features: * Low on-resistance N Channel: RDS(on) 0.17 W, VGS = 10 V, ID = 4 A P Channel : RDS(on) 0.2 W, VGS = 10 V, ID = 4 A* 4 V gate drive devices.* High density mountingSpecifications Item Symbol Ratings Unit Nch Pch Drain to source voltage VDSS 60 -60 V Ga...

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SeekIC No. : 004231790 Detail

4AM17: Features: * Low on-resistance N Channel: RDS(on) 0.17 W, VGS = 10 V, ID = 4 A P Channel : RDS(on) 0.2 W, VGS = 10 V, ID = 4 A* 4 V gate drive devices.* High density mountingSpecifications Item...

4AM17 Data Sheet

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Part Number:
4AM17
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

*  Low on-resistance
    N Channel: RDS(on)   0.17 W,  VGS = 10 V, ID = 4 A
    P Channel : RDS(on)    0.2 W,  VGS = 10 V, ID = 4 A
*  4 V gate drive devices.
*  High density mounting


Specifications

Item
Symbol
Ratings
Unit
Nch Pch
Drain to source voltage
VDSS
60
-60
V
Gate to source voltage
VGSS
20
20
V
Drain current
ID
8
-8
A
Drain peak current
ID(pulse)*1
32
32
A
Body to drain diode reverse drain current
IDR
8
-8
A
Channel dissipation
Pch(Tc = 25)*2
28
W
Channel dissipation
Pch*2
4.0
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C



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