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MFG:FAIRCHILD D/C:08


Part Number: 4N30M
MFG: FAIRCHILD
D/C: 08
Description: The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically ...
MFG:FAIRCHILD D/C:08


MFG: FAIRCHILD
D/C: 08
Description: The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically ...
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
| Symbol | Parameter | Value | Units |
| TOTAL DEVICE | |||
| TSTG TOPR TSOL |
Storage Temperature Operating Temperature Lead Solder Temperature (Wave) |
-40 to +150 -40 to +100 260 for 10 sec |
|
| PD | Total Device Power Dissipation @ TA = 25 Derate above 25 |
250 3.3 |
mW mW/ |
| EMITTER | |||
|
IF |
Continuous Forward Current Reverse Voltage Forward Current Peak (300s, 2% Duty Cycle) |
80 3 3.0 |
mA V A |
| PD | LED Power Dissipation @ TA = 25 Derate above 25 |
150 2.0 |
mW mW/ |
| DETECTOR | |||
| BVCEO BVCBO BVECO |
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage |
30 30 5 |
V V V |
| PD | Detector Power Dissipation @ TA = 25 Derate above 25 |
150 2.0 |
mW mW/ |
| IC | Continuous Collector Current | 150 | mA |
High sensitivity to low input drive current
Meets or exceeds all JEDEC Registered Specifications
UL, C-UL approved
VDE 0884 approval available as a test option
add option V (e.g., 4N29VM)
4N30
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