4N55

Maximum Reverse Diode Voltage :
Packaging :
Maximum Input Diode Current : 20 mA
Maximum Forward Diode Voltage : 1.9 V
Minimum Operating Temperature : - 55 C
Maximum Operating Temperature : + 125 C
Maximum Power Dissipation : 200 mW
Current Transfer Ratio : 20 %
Maximum Baud Rate : 400 KBps
Package / Case : CDIP-16


Features:

* Dual Marked with Device Part Number and DESC Drawing Number
* Manufactured and Tested on a MIL-PRF-38534 Certified Line
* QML-38534, Class H and K
* Five Hermetically Sealed Package Configurations
* Performance Guaranteed,Over -55°C to +125°C
* High Speed: Typically 400 kBit/s
* 9 MHz Bandwidth
* Open Collector Output
* 2-18 Volt V_CCRange
* 1500 Vdc Withstand Test Voltage
* High Radiation Immunity
* 6N135, 6N136, HCPL-2530/-2531, Function Compatibility
* Reliability Data

Application

* Military and Space
* High Reliability Systems
* Vehicle Command, Control,Life Critical Systems
* Line Receivers
* Switching Power Supply
* Voltage Level Shifting
* Analog Signal Ground Isolation (see Figures 7, 8,and 13)
* Isolated Input Line Receiver
* Isolated Output Line Driver
* Logic Ground Isolation
* Harsh Industrial Environments
* Isolation for Test Equipment Systems




Specifications

(No derating required up to +125°C)
Storage Temperature Range, T_S............................-65°C to +150°C
Operating Temperature, T_A ...................................-55°C to +125°C
Case Temperature, T_C...........................................................+170°C
Junction Temperature, T_J.......................................................+175°C
Lead Solder Temperature .......................................... 260°C for 10 s
Peak Forward Input Current, (each channel,
1 ms duration), I_FPK..............................................................40 mA
Average Input Forward Current, IFAVG (each channel).............20 mA
Reverse Input Voltage, BV_R....................See Electrical Characteristics
Average Output Current, I_O (each channel)................................8 mA
Peak Output Current, I_O (each channel) ..................................16 mA
Supply Voltage, V_CC .................................................... -0.5 V to 20 V
Output Voltage, V_O (each channel).............................. -0.5 V to 20 V
Input Power Dissipation (each channel)...................................36 mW
Output Power Dissipation (each channel) ...............................50 mW
Package Power Dissipation, P_D (each channel) .....................200 mW




Description

These 4N55 units are single, dual and quad channel, hermetically sealed optocouplers. The 4N55 are capable of operation and storage over the full military temperature range and can be purchased as either standard product or with full MIL-PRF-38534 Class Level H or K testing or from the appropriate DESC Drawing. 4N55 are manufactured and tested on a MIL-PRF-38534 certified line and are included in the DESC Qualified Manufacturers List QML-38534 for Hybrid Microcircuits.

Each channel of 4N55 contains a GaAsP light emitting diode which is optically coupled to an integrated photon detector. Separate connections for the photodiodes and output transistor collectors improve the speed up to a hundred times that of a conven- tional phototransistor optocoupler by reducing the base-collector capacitance.

These 4N55 are suitable for wide bandwidth analog applica-tions, as well as for interfacing TTL to LSTTL or CMOS. Current Transfer Ratio (CTR) is 9% mini- mum at I_F = 16 mA. The 18 V V_CC

The 4N55 is suitable for wide bandwidth analog applications, as well as for interfacing TTL to LSTTL or CMOS. Current Transfer Ratio (CTR) is 9% min at IF = 16mA. The 18V Vcc capability will enable the designer to interface any TTL family to CMOS. The availability of the base lead allows optimized gain/bandwidth adjustment in analog applications. The shallow depth of the IC photodiode 4N55 provides better radiation immunity than conventional phototransistor couplers.

These 4N55 are also available with the transistor base node connected to improve common mode immunity and ESD susceptibility. In addition, higher CTR minimums are available by special request.

Package styles of 4N55 for this die set in one, two or four channels are 8 and 16-Pin DIP through hole, 16-Pin surface mount DIP flat pack, and 20 pad leadless ceramic chip carrier. Most 4N55 are available with a variety of lead forms and plating options. See datasheet for details.