4N55/883B

High Speed Optocouplers 1Ch 9MHz 1500Vdc

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SeekIC No. : 0087146 Detail

4N55/883B: High Speed Optocouplers 1Ch 9MHz 1500Vdc

floor Price/Ceiling Price

US $ 38.35~54.79 / Piece | Get Latest Price
Part Number:
4N55/883B
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • Unit Price
  • $54.79
  • $41.09
  • $38.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Current Transfer Ratio : 20 % Maximum Baud Rate : 400 KBps
Maximum Forward Diode Voltage : 1.9 V Maximum Input Diode Current : 20 mA
Maximum Power Dissipation : 200 mW Maximum Operating Temperature : + 125 C
Minimum Operating Temperature : - 55 C Package / Case : CDIP-16    

Description

Maximum Reverse Diode Voltage :
Packaging :
Maximum Input Diode Current : 20 mA
Maximum Forward Diode Voltage : 1.9 V
Minimum Operating Temperature : - 55 C
Maximum Operating Temperature : + 125 C
Maximum Power Dissipation : 200 mW
Current Transfer Ratio : 20 %
Maximum Baud Rate : 400 KBps
Package / Case : CDIP-16


Description

The 4N55/883B is a high reliability Class H two channel hermetically sealed optocoupler in a 16-Pin ceramic DIP package with gold plated leads. Solder dipped leads and various lead form options are also available. See datasheet for details.
The 4N55/883B is capable of operation and storage over the full military temp range and may also be purchased as either commercial grade, with MIL-PRF-38534 Class Level K testing, or from DSCC SMD 5962-87679. The 4N55/883B is manufactured and tested on a MIL-PRF-38534 certified line and included in the DSCC Qualified Manufacturers List QML-38534 for Hybrid Microcircuits.
Each channel contains a GaAsP LED which is optically coupled to an integrated photon detector. Separate connections for the photodiodes 4N55/883B and output transistor collectors improve the speed up to a hundred times that of a conventional phototransistor coupler by reducing the base-collector capacitance.
The 4N55/883B is suitable for wide bandwidth analog applications, as well as for interfacing TTL to LSTTL or CMOS. Current Transfer Ratio (CTR) is 9% min at IF = 16mA. The 18V Vcc capability will enable the designer to interface any TTL family to CMOS. The availability of the base lead allows optimized gain/bandwidth adjustment in analog applications. The shallow depth of the IC photodiode 4N55/883B provides better radiation immunity than conventional phototransistor couplers.
These 4N55/883B are also available with the transistor base node connected to improve common mode immunity and ESD susceptibility. In addition, higher CTR minimums are available by special request.
Package styles for this die set in one, two or four channels are 8 and 16-Pin DIP thru hole, 16-Pin surface mount DIP flat pack, and 20 pad leadless ceramic chip carrier. Most 4N55/883B are available with a variety of lead forms and plating options. See datasheet for details.




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