74V2G66

Features:

 HIGHSPEED:
   t_PD = 0.3 ns (TYP.) at V_CC =5V
   t_PD = 0.4 ns (TYP.) at V_CC = 3.3V
LOWPOWERDISSIPATION:
   I_CC =1 mA (MAX.) at T_A =25 oC
LOW"ON" RESISTANCE:
   R_ON =10W (TYP.)AT V_CC = 5.0VI_I/O=100mA
   R_ON =12W (TYP.)AT V_CC = 3.3VI_I/O=100mA
SINEWAVE DISTORTION 0.04%(TYP.)AT V_CC=3.3Vf=1KHz
WIDE OPERATINGVOLTAGERANGE:
   V_CC (OPR)= 2V to 5V



Pinout




Specifications

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7	V
VI	DC Input Voltage	-0.5 to VCC + 0.5	V
VIC	DC Control Input Voltage	-0.5 to 7	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	± 20	mA
IIK	DC Control Input Diode Current	- 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	± 50	mA
ICC or IGND	DC VCC or Ground Current	± 100	mA
Tstg	Storage Temperature	-65 to +150	oC
TL	Lead Temperature (10 sec)	300	oC

Description

   The 74V2G66 is an high-speed CMOS DUAL BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This feature makes this part ideal for battery-powered equipment. This bilateral switch handles rail to rail analog and digital signals that may vary across the full power-supply range (from Vcc to Ground).

   The C input of the 74V2G66 is provided to control the switch and it's compatible with standard CMOS output; the switch is ON when the C input is held high and off when C is held low. It can be used in many application as Battery Powered System, Audio Signal Routing, Communications System, Test Equipment. It's available in the commercial
temperature range in SOT23-8L.