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Part Number: 7N60
Description: The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast swi...
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7N60
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General Description
7N60 General Description
The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
7N60 Maximum Ratings
|
PARAMETER |
SYMBOL |
RATINGS |
UNIT | |
| Drain-Source Voltage |
VDSS |
600 |
V | |
| Gate-Source Voltage |
VGSS |
±30 |
V | |
| Avalanche Current (Note 1) |
IAR |
7.4 |
A | |
| Continuous Drain Current | TC = 25°C |
ID |
7.4 |
A |
| TC = 100°C |
4.7 |
A | ||
| Pulsed Drain Current (Note 1) |
IDM |
29.6 |
A | |
| Avalanche Energy, Single Pulsed (Note 2) |
EAS |
580 |
mJ | |
| Avalanche Energy, Repetitive Limited by TJ(MAX) |
EAR |
14.2 |
mJ | |
| Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | |
| Power Dissipation (TC = 25) Derate above 25 |
PD |
142 |
W | |
|
1.14 |
W/ | |||
| Junction Temperature |
TJ |
+150 |
||
| Operating and Storage Temperature |
TSTG |
-55 ~ +150 |
||
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
7N60 Features
* RDS(ON) = 1 @VGS = 10 V
* Low gate and reverse transfer Capacitance ( C: 16 pF typical )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
* Low gate and reverse transfer Capacitance ( C: 16 pF typical )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
7N60
PDF/DataSheet Download
- Datasheet: 7N60
- File Size: 175315 KB
- Manufacturer: UTC
- Click here to Download
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