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Part Number: 7N60L
Description: The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast sw...
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7N60L
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General Description
7N60L General Description
The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
7N60L Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Drain to source voltage 7N60L-A 7N60L-B |
VDSS | 600 650 |
V |
| Gate to source voltage | VGSS | ±30 | V |
| Avalanche Current (Note 1) | IAR | 7.4 | A |
| Continuous Drain Current | ID | 7.4 | A |
| Pulsed Drain Current (Note 1) | IDM | 29.6 | A |
| Avalanche Energy Single Pulsed (Note 2) |
EAS | 600 | mJ |
| Repetitive (Note 1) | EAR | 14.2 | mJ |
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 4.5 | V/ns |
| Power dissipation TO-220 TO-220F |
PD |
142 |
W |
| Junction temperature | TJ | 150 | |
| Storage temperature | Tstg | -55 to +150 |
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
7N60L Features
` RDS(ON) = 1.2 @VGS = 10 V
` Ultra low gate charge (typical 29 nC )
` Low reverse transfer Capacitance ( CRSS = typical 16pF )
` Fast switching capability
` Avalanche energy tested
` Improved dv/dt capability, high ruggedness
` Ultra low gate charge (typical 29 nC )
` Low reverse transfer Capacitance ( CRSS = typical 16pF )
` Fast switching capability
` Avalanche energy tested
` Improved dv/dt capability, high ruggedness
7N60
PDF/DataSheet Download
- Datasheet: 7N60
- File Size: 175315 KB
- Manufacturer: UTC
- Click here to Download
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