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Part Number: ACT-D2M32A-090F18I

 

 

 

 

Description: Utilizing AMD's Sector Erase Flash Memory Die, the ACT-F2M32A is a high speed, 64 megabit CMOS flash m...


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ACT-D2M32A-090F18I General Description


Utilizing AMD's Sector Erase Flash Memory Die, the ACT-F2M32A is a high speed, 64 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications.

The ACT-F2M32A consists of four high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each).

The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades of 90ns, 120ns and 150ns maximum are standard.

ACT-D2M32A-090F18I Maximum Ratings

Parameter
Range
Units
Case Operating Temperature Range
-55 to +125
Storage Temperature Range
-65 to +150
Voltage with Respect to GND (All pins except A9) (1)
-2.0 to +7.0
V
Voltage on Pins A9, OE, RESET (2)
-2.0 to +13.5
V
Vcc Supply Voltage with Respect to Ground (1)
-2.0 to +7.0
V
Output Short Circuit Current (3)
200
mA

Notes:
1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on input/output pins is VCC + 0.5V, which may overshoot to VCC + 2.0V for periods up to 20ns.

2. Minimum DC input voltage on A9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may vershoot GND to -2.0V for periods up to 20ns.

Maximum DC input voltage on A9 is +12.5V which may overshoot to 14V for periods up to 20ns.

3. No more than one output shorted to ground for no more than 1 second.

NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the evice. These are stress rating only; functional operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.

ACT-D2M32A-090F18I Features

4 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package
Overall Configuration is 2M x 32
+5V Power Supply / +5V Programing Operation
Access Times of 90, 120 and 150 ns
Erase/Program Cycles 100,000 Minimum
Sector erase architecture (Each Die)
32 uniform sectors of 64 Kbytes each
Any combination of sectors can be erased. Also supports full chip erase
Sector group protection is user definable
Embedded Erase Algorithims Automatically pre-programs and erases the die or any sector
Embedded Program Algorithims Automatically programs and verifies data at specified address
Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
Hardware RESET pin Resets internal state machine to the read mode
Erase Suspend/Resume Supports reading or programming data to a sector not being erased
Packaging Hermetic Ceramic
 68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
Internal Decoupling Capacitors for Low Noise Operation
Commercial, Industrial and Military Temperature Ranges
MIL-PRF-38534 Compliant MCMs Available

ACT-D2M32A-090F18I datasheet

ACT-D2M32A-090F18I
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  • Datasheet: ACT-D2M32A-090F18I
  • File Size: 103680 KB
  • Manufacturer: AEROFLEX [Aeroflex Circuit Technology]
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