ACT-SF41632 Maximum Ratings
ACT-SF41632 Features
. 4 128K x 8 SRAMs & 4 512K x 8 Flash Die in
. One MCM Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash)
. Organized as 128K x 32 of SRAM and 512K x 32
of Flash Memory with Common Data Bus
. Low Power CMOS
. Input and Output TTL Compatible Design
. MIL-PRF-38534 Compliant MCMs Available
. Decoupling Capacitors and Multiple Grounds for Low Noise
. Commercial, Industrial and Military Temperature Ranges
. Industry Standard Pinouts
. TTL Compatible Inputs and Outputs
. Packaging Hermetic Ceramic
66Lead, PGA-Type, 1.385"SQ x 0.245"max,
Aeroflex code# "P1,P5 with/without shoulders)"
68Lead, Dual-Cavity CQFP(F2), 0.88"SQ x
.20"max (.18 max thickness available, contact
factory for details) (Drops into the 68 Lead
JEDEC .99"SQ CQFJ footprint)
FLASH MEMORY FEATURES
. Sector Architecture (Each Die)
8 Equal Sectors of 64K bytes each
Any combination of sectors can be erased with
one command sequence.
. +5V Programing, +5V Supply
. Embedded Erase and Program Algorithms
. Hardware and Software Write Protection
. Page Program Operation and Internal Program Control Time.
. 10,000 Erase/Program Cycles
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All