ACT-SF41632N-26P1I Maximum Ratings
ACT-SF41632N-26P1I Features
·4 -C 128K x 8 SRAMs & 4-C 512K x 8 Flash Die in One MCM
·Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash)
·Organized as 128K x 32 of SRAM and 512K x 32
·of Flash Memory with Common Data Bus
·Low Power CMOS
·Input and Output TTL Compatible Design
·MIL-PRF-38534 Compliant MCMs Available
·Decoupling Capacitors and Multiple Grounds for Low Noise
·Commercial, Industrial and Military Temperature Ranges
·Industry Standard Pinouts
·TTL Compatible Inputs and Outputs
·Packaging - Hermetic Ceramic
· Sector Architecture (Each Die)
·8 Equal Sectors of 64K bytes each
·Any combination of sectors can be erased with one command sequence.
·+5V Programing, +5V Supply
·Embedded Erase and Program Algorithms
·Hardware and Software Write Protection
·Page Program Operation and Internal Program Control Time.
· 10,000 Erase/Program Cycles
ACT-SF41632N-26P1I datasheet
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