ACTS373MS

Features: • 1.25 Micron Radiation Hardened SOS CMOS• Total Dose 300K RAD (Si)• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)• SEU LET Threshold >80 MEV-cm2/mg• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse• Latch-Up Free Under Any Con...

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ACTS373MS Picture
SeekIC No. : 004268126 Detail

ACTS373MS: Features: • 1.25 Micron Radiation Hardened SOS CMOS• Total Dose 300K RAD (Si)• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)• SEU LET Threshold >80 ...

floor Price/Ceiling Price

Part Number:
ACTS373MS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)
• SEU LET Threshold >80 MEV-cm2/mg
• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2V Min
• Input Current 1µA at VOL, VOH





Pinout

  Connection Diagram




Specifications

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6.0V
Input Voltage Range, All Inputs . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . .±50mA
Storage Temperature Range (TSTG) . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 1
(All Voltages Reference to VSS)
Thermal Impedance JA JC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Maximum Device Power Dissipation. . . . . . . . . . . . . . . ..(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Gates





Description

The Intersil ACTS373MS is a radiation hardened octal transparent latch with three-state outputs. The outputs are transparent to the inputs when the latch enable (LE) is high. When theLE goes low, the data is latched. When the Output Enable (OE) is high, the outputs are in the high impedance state. The latch operation is independent of the state of the output enable.

The ACTS373MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.



The Intersil ACTS373MS is a radiation hardened octal transparent latch with three-state outputs. The outputs are transparent to the inputs when the latch enable (LE) is high. When the LE goes low, the data is latched. When the Output Enable (OE) is high, the outputs are in the high impedance state. The latch operation is independent of the state of the output enable. The ACTS373MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.




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