AD8055ANZ

The AD8055ANZ is one member of the AD8055 series.The AD8055 (single) voltage feedback amplifier offer bandwidth and slew rate typically found in current feedback amplifiers.Additionally, these amplifiers are easy to use and available at a very low cost.Their 0.1 dB flatness out to 40 MHz, wide bandwidth out to 300 MHz, along with 1400 V/s slew rate and 20 ns settling time, make them useful for a variety of high speed applications.

Features of the AD8055ANZ are:(1)easy-to-use voltage feedback architecture; (2)gain flatness 0.1 dB to 40 MHz; (3)0.01% differential gain error; (4)0.02° differential phase error; (5)drives 4 video loads (37.5 V) with 0.02% differential; (6)gain and 0.1° differential phase; (7)high output drive current: over 60 mA.While the AD8055 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.

The absolute maximum ratings of the AD8055ANZ can be summarized as:(1)supply voltage:13.2 V;(2)input voltage (common mode):±VS;(3)differential input voltage:±2.5 V;(4)storage temperature range:-65 to +150;(5)operating temperature range:-40 to +125;(6)lead temperature:300.Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.The maximum power that can be safely dissipated by the AD8055 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150. Exceeding this limit temporarily can cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175 for an extended period can result in device failure.